Donor-acceptor-pair emission in fluorescent 4H-SiC grown by PVT method

Donor-acceptor-pair emission characterization in N-B doped fluorescent SiC

In the present work, we investigated donor-acceptor-pair emission in N-B doped fluorescent 6H-SiC, by means of photoluminescence, Raman spectroscopy, and angle-resolved photoluminescence. The photoluminescence results were interpreted by using a band diagram with Fermi-Dirac statistics. It is shown that with N and B concentrations in a range of 1018 cm−3 the samples exhibit the most intense lum...

Ionization energy of the phosphorus donor in 3C-SiC from the donor-acceptor pair emission

The Zn-vacancy related green luminescence and donor–acceptor pair emission in ZnO grown by pulsed laser deposition

A low temperature (10 K) photoluminescence study shows that green luminescence (GL) peaking at 2.47 eV and near band edge (NBE) emission at 3.23 eV are introduced in undoped ZnO grown by pulsed laser deposition (PLD) after 900 C annealing. The NBE emission exhibiting blue shift with increasing temperature is assigned to the transitions of the donor–acceptor-pair (DAP)/free-electron-to-acceptor ...

Deep donor-acceptor pair recombination in InGaAs-based heterostructures grown on InP substrates

We are investigating a series of lattice-matched InxGa1−xAs/InAsyP1−y double heterostructures with indium concentrations ranging between x=0.53 and x=0.78. The double heterostructures incorporating indium-rich alloys x 0.53 experience lattice mismatch relative to the InP substrate. Previous work has produced convincing but indirect evidence that the distribution of defect levels in the InxGa1−x...

Identification of the carbon antisite-vacancy pair in 4H-SiC.

The metastability of vacancies was theoretically predicted for several compound semiconductors alongside their transformation into the antisite-vacancy pair counterpart; however, no experiment to date has unambiguously confirmed the existence of antisite-vacancy pairs. Using electron paramagnetic resonance and first principles calculations we identify the S15 center as the carbon antisite-vacan...